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Classification: 27262600 [AHB679003]
Preferred name | 27-26-26 Insulated-gate bipolar transistor |
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Definition | transistor having a conduction channel and a PN junction, of which the currents flowing through the channel and the junction are controlled by an electric field resulting from a voltage applied between the gate and emitter terminals |
Keywords | IGBT |
IRDI | 0173-1#01-AHB679#003 |
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